| PART |
Description |
Maker |
| K7B803625B DSK7B803625B DS_K7B803625B K7B801825B K |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7B803625B K7B801825B |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7A801809B K7A803609B K7A803609B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7B803625M K7B801825M |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| KM718V987 |
(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7M801825B K7M803625B06 |
256Kx36 & 512Kx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7N801801M |
256Kx36 & 512Kx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7N803645A K7N801845A |
256Kx36-Bit Pipelined NtRAMData Sheet
512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| KM736V847 |
256Kx36-Bit Flow Through No Turnaround SRAM(256Kx36位数据流无返回静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
