| PART |
Description |
Maker |
| ACT3780QY410-T ACT378012 |
ActivePath Battery Charger
|
Active-Semi, Inc
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| BUZ103SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
| BUZ104SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
|
| IRFW510A IRFI510ATU IRFW510ATM IRFI510A |
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFI510
Advanced Power MOSFET 5.6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
|
