PART |
Description |
Maker |
K6F4008R2CFAMILY K6F4008R2C-FF850 |
512K X 8 STANDARD SRAM, 85 ns, PBGA48 512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4008U2CFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4008U1CFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
W24V04 |
512K×8bit CMOS Static RAM(512K×8位CMOS静态RAM)
|
Winbond Electronics Corp
|
CMP0817BA8-F70I CMP0817BA8-I |
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
HY62LF16806B-I HY62LF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits
|
HYNIX
|
E28F004BL-T150 E28F004BL-B150 E28F400BL-T150 PA28F |
4-MBlT (256K x 16/ 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% Series 320 tactile switch with multiple color and cap options FireWire Current Limiter and Low-Drop ORing Switch Controller 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16. 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 4 MBlT56K × 16。为512k × 8)低功耗启动块闪存系列 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO40 4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 512K X 8 FLASH 12V PROM, 150 ns, PDSO56
|
Intel Corporation Intel Corp. Rochester Electronics, LLC Intel, Corp. Sharp, Corp.
|
HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I |
512K X 16 STANDARD SRAM, 100 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
A64S9316G-85I A64S9316 A64S9316G-70 A64S9316G-70I |
512K X 16 Bit Low Voltage Super RAM 12k × 16位低电压超内
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
|
White Electronic Designs Corporation
|
62WV5128ALL IS62WV5128ALL-70T2 IS62WV5128ALL-70T2I |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|