| PART |
Description |
Maker |
| EL0036 |
High Power Limiters 1.25 GHz to 1.35 GHz
|
Micronetics, Inc.
|
| EL0051 |
High Power Limiters 0.5 GHz to 2 GHz
|
Micronetics, Inc.
|
| EL0094 |
High Power Limiters 4 GHz to 8 GHz
|
Micronetics, Inc.
|
| PE8021 |
SMA PIN-PIN DIODE LIMITERS FREQUENCY RANGE: 2.0-8.0 GHz
|
Pasternack Enterprises,...
|
| PE8025 |
SMA PIN-PIN DIODE LIMITERS FREQUENCY RANGE: 7.0-12.0 GHz
|
Pasternack Enterprises,...
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| PE4283 4283-00 4283-01 4283-02 4283-51 4283-52 |
SPDT High Power UltraCMOS?/a> DC - 4.0 GHz RF Switch
SPDT High Power UltraCMOSDC - 4.0 GHz RF Switch
SPDT High Power UltraCMOS⑩ DC - 4.0 GHz RF Switch
|
http://
PEREGRINE[Peregrine Semiconductor Corp.]
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ES0314-20 |
High Power Switch 2 GHz to 18 GHz
|
Micronetics, Inc.
|
| MASWSS0020 MASWSS0020SMB MASWSS0020TR |
DC-3 GHz, GaAs SP4T 2.5V high power switch
GaAs SP4T 2.5V High Power Switch DC - 3 GHz
ER 9C 6#16 3#12 SKT RECP
ER 9C 6#16 3#12 PIN RECP 砷化镓SP4T 2.5V的大功率开关直 3千兆
|
MA-Com
MACOM[Tyco Electronics]
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
