| PART |
Description |
Maker |
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| VSS |
rohs compliance
|
Surge Components
|
| SJA |
rohs compliance
|
Surge Components
|
| ORE |
rohs compliance
|
Surge Components
|
| 87203-6366 |
RoHS Certificate of Compliance
|
Molex Electronics Ltd.
|
| G4P106-LF |
Compliance with ROHS requirements
|
Bothhand USA, LP.
|
| SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED
GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SF |
From old datasheet system
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| RD09MUP211 |
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RD01MUS2B |
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
|
Mitsubishi Electric Semiconductor
|
| RD05MMP111 |
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
|
Mitsubishi Electric Semiconductor
|
