| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P24 |
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| P4C147-15CM P4C147-15CC P4C147-25CM P4C147-25CC P4 |
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 超高K的1静态CMOS存储
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 20 ns, CDIP18
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 15 ns, CQCC18
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 15 ns, CDIP18
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 25 ns, CDIP18
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM 4K X 1 STANDARD SRAM, 20 ns, CQCC18
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
Electronic Theatre Controls, Inc.
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61C25616AL IS64C25616AL IS61C25616AL-10KI IS61C2 |
256K x 16 HIGH-SPEED CMOS STATIC RAM
256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IC61LV25616 IC61LV25616-8TI IC61LV25616-10B IC61LV |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
