| PART |
Description |
Maker |
| ECH8661 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| ECH8660 ENA1358 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| ECH8668 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| EMH2601 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2610 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
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Sanyo Semicon Device
|
| CPH6619 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2607 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
Sanyo Semicon Device
|
| ECH8662 |
N-Channel Silicon MOSFETs
|
Sanyo Semicon Device
|
| TPCA8135 |
MOSFETs Silicon P-Channel MOS
|
Toshiba Semiconductor
|
| IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
