PART |
Description |
Maker |
BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc.
|
ZHCS500 UZHCS500 ZHCS500TA |
DIODE SCHOTTKY SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a> SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SOT23 SILICON HIGH CURRENT 0.5 A, SILICON, SIGNAL DIODE High Current Schottky Diode
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ZETEX[Zetex Semiconductors] Diodes Incorporated
|
HSB88WA |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
FME-220A |
Schottky Barrier Diode - 90V/100V 100V, 20A Schottky barrier diode in TO220F package 100V/ 20A Schottky barrier diode in TO220F package 100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric] Sanken Electric Co., Ltd.
|
MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
CD214A-B40 CD214A-B40L CD214A-B220 CD214A-B30 CD21 |
Schottky Barrier Diodes 2A, VR=60V 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC Schottky Barrier Rectifier Chip Diode
|
Bourns, Inc. BOURNS[Bourns Electronic Solutions]
|
BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管(低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装) RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
HSM126S HSM126S-E |
UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE Silicon Schottky Barrier Diode for System Protection
|
Renesas Electronics Corporation
|