| PART |
Description |
Maker |
| 15GN03CA-TB-E ENA1106A |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single CP
|
ON Semiconductor
|
| 15GN03FA |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single SSFP
|
ON Semiconductor
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SC5231A-8-TL-E 2SC5231A-9-TL-E |
RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP
|
ON Semiconductor
|
| SL1212101-A |
BUZZER,PIEZO,3200Hz,87dB, 3Vp-p,70mA,SMD 电路保护热敏电阻
BUZZER,E/M,2400Hz,85dB, 1.5Vp-p,70mA,SMD,GRAY 电路保护热敏电阻
|
Ametherm, Inc.
|
| IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce（on）typ.1.10V @和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
|
| FC809 |
30V/ 70mA Rectifier
30V, 70mA Rectifier
|
SANYO[Sanyo Semicon Device]
|
| 2SD2212 2SD1764 A5800371 |
Medium Power Transistor (Motor, Relay or Solenoid drive) (60 10V, s2A)
From old datasheet system
|
ROHM
|
| BUH417 |
V(cbo): 1700V; V(ceo): 700V; V(ebo): 10V; 7A; 55W; CRT horizontal deflection high voltage NPN fast switching transistor
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 7A I(C) | TO-218
|
SGS Thomson Microelectronics
|
| FC809 |
30V, 70mA Rectifier Silicon Barrier Diode
|
SANYO
|
