PART |
Description |
Maker |
SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器 MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4 3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
RC3020C-TA RC3015C-TA RC3015C-TB RC3003C-TA RC3003 |
3 phase 3 lines/Width mounted type
|
Soshin
|
RC2010C-SB |
Single phase 2 lines/Length mounted type
|
Soshin
|
S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
S555-5999-41 0555-6400-06 S555-6400-08 0553-3965-0 |
6 Lines (2 x 3) COMMON MODE CHOKES For LAN and Telecom Applications 2 Lines (2 x 1) 4 Lines (4 x 1) TELECOM FILTER 16 Lines (2 x 8) 16线(2 × 8 4 Lines (2 x 2) TELECOM FILTER
|
BEL[Bel Fuse Inc.] Bel Fuse, Inc.
|
VKO55-14IO7 VKO55-16IO7 VKO55-12IO7 VGO55-08IO7 VG |
Single Phase Rectifier Bridge 41 A, 1600 V, SCR Single Phase Rectifier Bridge 41 A, 1400 V, SCR Single Phase Rectifier Bridge 41 A, 1200 V, SCR Single Phase Rectifier Bridge 41 A, 800 V, SCR Power Modules/Rectifier Bridge Modules: Single Phase Half-control Bridges / Single Phase, Full-control Rectifier Bridges
|
IXYS, Corp. IXYS[IXYS Corporation]
|
BAS116 |
Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us
|
TY Semiconductor Co., Ltd
|
CAT28C64BHP-20 CAT28C64BHN-15 CAT28C64BHT-20 CAT28 |
PROFET - Smart High Side Switches XWAY ADM6993 RF Switches; Package: PG-TSLP-7; P-0.1dB(min): 21.0 dBm; Switching Time(max): 4.0 µs; Isolation @1GHz: 32.0 dB; Insertion Loss @1GHz: 0.4 dB; Pmax: 21.0 dBm HITFET, TEMPFET - Smart Low-Side Switches IGBT Modules up to 1200V SixPACK; Package: AG-EASY2B-1; IC (max): 50.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EasyPACK 2B; IGBT Modules up to 6500V Single; Package: A-IHV130-3; IC (max): 400.0 A; VCE(sat) (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm; Single: N-Channel 600V MOSFETs; Package: PG-TO262-3; Technology: CoolMOS; VDS (max): 600.0 V; RDS (on) (max) (@10V): 105.0 mOhm; ID (max): 31.0 A; RthJC (max): 0.5 K/W; XWAY ADM5120P Medium Power IF max = 500mA; Package: PG-SOT363-6; Configuration: Single; VR (max): 30.0 V; IF (max): 2,000.0 mA; CT (max): 60.0 pF; VF (max): 600.0 mV; X-GOLD213 - PMB8810 UMTS LNA; Package: PG-TSLP-16; Frequency Hz: 800 MHz 1900 MHz 2100 MHz; Gain (typ): 15.2 dB 16.5 dB 16.5 dB; F (typ): 1.2 dB 1.0 dB 1.1 dB; P-1dB (in): -12 -10 -11; I (typ): 3.5 mA 3.4 mA 3.5 mA; SPOC - SPI Power Controller for Advanced Light Control; Package: PG-DSO-36; Channels: 5.0; LED mode: No; Cranking mode: No; Watchdog: No; Over Voltage Protection: 41.0 V IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 75.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 2; 128Kx8 EEPROM 128Kx8 EEPROM ADM3120BX x8的EEPROM IGBT Modules up to 6500V Single; Package: A-IHV130-3; I<sub>C </sub>(max): 400.0 A; V<sub>CE(sat)</sub> (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
|
Honeywell International, Inc. NXP Semiconductors N.V. Infineon Technologies AG Amphenol, Corp. Vectron International, Inc. Advanced Analogic Technologies, Inc.
|
S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
VHF36-08IO5 VHF36-12IO5 VHF36-14IO5 VHF36-16IO5 L0 |
Half Controlled Single Phase Rectifier Bridge 28 A, 1400 V, SCR Half Controlled Single Phase Rectifier Bridge 28 A, 1200 V, SCR Half Controlled Single Phase Rectifier Bridge with Freewheeling Diode(VRRM00-1600V的半桥控制单相位整流带自由滑动的二极管)) Power Modules/Rectifier Bridge Modules: Single Phase Half-control Bridges / Single Phase, Full-control Rectifier Bridges
|
IXYS, Corp. IXYS[IXYS Corporation]
|