| PART |
Description |
Maker |
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR16CS |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
| BCR08AS |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
| BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR25A BCR25B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR16UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR16HM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| GMS90C3X GMS97C56H |
HYNIX SEMICONDUCTOR INC. 8-BIT SINGLE-CHIP MICROCONTROLLERS Hynix半导体公司的8位单芯片微控制器
HYNIX SEMICONDUCTOR INC. 8-BIT SINGLE-CHIP MICROCONTROLLERS 8-BIT, OTPROM, 33 MHz, MICROCONTROLLER, PDIP40
|
Hynix Semiconductor, Inc.
Electronic Theatre Controls, Inc.
|
