Part Number Hot Search : 
30508 EGP10 TWD2241 L6011BS DB152 10002 LNST10 120CA
Product Description
Full Text Search

GT30J101 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications

GT30J101_5785686.PDF Datasheet

 
Part No. GT30J101
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications

File Size 152.84K  /  6 Page  

Maker

TOSHIBA



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: GT30J301
Maker: TOSHIBA
Pack: TO-3P
Stock: Reserved
Unit price for :
    50: $2.95
  100: $2.81
1000: $2.66

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ GT30J101 Datasheet PDF Downlaod from Datasheet.HK ]
[GT30J101 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for GT30J101 ]

[ Price & Availability of GT30J101 by FindChips.com ]

 Full text search : Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
 Product Description search : Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications


 Related Part Number
PART Description Maker
IRG4BC40K Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International Rectifier, Corp.
IRF[International Rectifier]
IRG4PC30W IRG4PC30WPBF Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
International Rectifier, Corp.
IRF[International Rectifier]
MGW12N120 Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
ONSEMI[ON Semiconductor]
IRG4BC29F IRG4BC30F IRG4BC30 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)
IRF[International Rectifier]
International Rectifier, Corp.
GT15M321 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
TOSHIBA[Toshiba Semiconductor]
MGP4N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP7N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGP11N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGW21N60ED-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
CM600HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
IRG4PSC71K-15 INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
MGP21N60E Insulated Gate Bipolar Transistor
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
GT30J101 Resistor GT30J101 Processors GT30J101 rectifier GT30J101 electric GT30J101 Memory
GT30J101 components GT30J101 Phase GT30J101 Dual GT30J101 clock GT30J101 Collector
 

 

Price & Availability of GT30J101

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.18305397033691