| PART |
Description |
Maker |
| SAK-C164CI-8EM SAF-C164CI-8E25MD-STEP SAF-C164CI-8 |
Compact Microcontrollers for Motor-Drive applications
16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 25 MHz
16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K OTP, 2 K RAM, CAN, Drive Control Unit, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - ROMless, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, enh. Power Saving features, 20 MHz
48Kbyte ROM; 20 (25MHz) MHz; V(dd): -0.5to 6.5V; V(in): -0.5 to 0.5V; 10mA; 1.5W; 16-bit single chip microcontoller
|
Infineon
|
| IRFD123 IRFD120 IRFD122 IRFD121 RFD120 |
(IRFD120 / IRFD121 / IRFD122 / IRFD123) N-Channel Power MOSFETs
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs 1.3a规范，以.1A的，80V00V.30.40 Ohm的N通道功率MOSFET
|
HARRIS[Harris Corporation]
Harris Semiconductor
Harris, Corp.
|
| IRF520 MTP10N10 MTP10N08 IRF522 IRF522R IRF123 IRF |
IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs
N-Channel Power MOSFETs, 11 A, 60-100 V
Trans MOSFET N-CH 100V 7A 3-Pin(3 Tab) TO-220AB
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| IXFH11N80 IXFH13N80 IXFM13N80 IXFM11N80 |
HiPerFET Power MOSFETs 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
|
