| PART |
Description |
Maker |
| IC42SXXXXX IC42S16800L |
DYNAMIC RAM, SDRAM
4M x 8M x 4 Banks SDRAM
|
ICSI
Integrated Circuit Solution Inc
|
| IC42S16400A |
DYNAMIC RAM, SDRAM
|
ICSI
|
| IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM
From old datasheet system
1Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| IC41SV44052 IC41SV44054 IC41SV44052-70J IC41SV4405 |
DYNAMIC RAM, FPM DRAM
4Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
http://
|
| IC41C16105S IC41LV16105S IC41C16105S-50K IC41C1610 |
DYNAMIC RAM, FPM DRAM
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
| HYB514400BJ-50- Q67100-Q756 Q67100-Q973 HYB514400B |
RES 12K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
| IS42S16100A1 IS42S16100 IS42S16100-7T IS42S16100-1 |
512K WORDS X 16 BITS X 2 BANKS (16-MBIT) SYNCHRONOUS DYNAMIC RAM
16mb Synchronous Dynamic RAM: 512kx16x2
|
Integrated Silicon Solution, Inc
ISSI
|
| TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM
1048576 x 4 BIT DYNAMIC RAM
Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
|
http://
Toshiba Semiconductor
Toshiba Corporation
|
| HYB314400BJ-50- HYB314400BJ-60 |
1M x 4-Bit Dynamic RAM
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
|
SIEMENS AG
|
| THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 32 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IC41C16100AS IC41C16100A IC41LV16100AS IC41LV16100 |
DYNAMIC RAM, EDO DRAM
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|
