| PART |
Description |
Maker |
| M29W512B M29W512B120K1T M29W512B120NZ1T M29W512B55 |
512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory 512千位64Kb的8，大量低电压单电源闪
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics
STMICROELECTRONICS
|
| M27512 M27512-3F6 27512 M27256-20F6 M27256-25F6 M2 |
NMOS 512 Kbit (64Kb x 8) UV EPROM, 250ns
NND - NMOS 512 KBIT (64KB X8) UV EPROM
NMOS 512K 64K x 8 UV EPROM NMOS管为512k 64KX8的紫外线存储
NMOS 512K 64K x 8 UV EPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| 27C512-120 M27C512-12B M27C512-12B1TR M27C512-12B1 |
512 Kbit (64Kb x8) UV EPROM and OTP EPROM
512 Kbit 64Kb x8 UV EPROM and OTP EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27W512-100B6E M27W512-100F6 M27W512-100K6 M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM
4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
http://
|
| M48T512Y10 M48T512V-70PM1 M48T512Y-70PM1 M48T512V- |
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash
From old datasheet system
(SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| CA4900S |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
|
|
| UN2124 UNR2124 UN2121 UNR2121 UN212Y UN2122 UNR212 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| M24512-DR12 M24512-DF12 M24512-R12 M24512-DFMN6TP |
512 Kbit serial I2C bus EEPROM
512Kit Serial I2C bus EEPROM with three Chip Enable Lines
512-Kbit serial I2C bus EEPROM
|
ST Microelectronics
STMicroelectronics
|
