| PART |
Description |
Maker |
| UPA1764 PA1764 UPA1764G |
SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS
Vishay Siliconix
|
| TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| 2N7002DSPT |
Dual N-Channel Enhancement MOS FET
|
Chenmko Enterprise Co. Ltd.
|
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
