| PART |
Description |
Maker |
| Q68000-A6887 CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q68000-A8787 CGY62 |
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output) 200 MHz - 1800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 input / output)
From old datasheet system
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 ヘ input / output)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| TG2216TU |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
Toshiba Corporation
|
| TG2211FT |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| NGA-589 |
MICROWAVE/MILLIMETERWAVEAMPLIFIER|GAAS|TO-243|3PIN|PLASTIC
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
|
Electronic Theatre Controls, Inc.
Sirenza Microdevices, Inc.
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| GC9903 GC9914 GC9944 GC9942 GC9901 GC9921 GC9923 |
Microwave Monolithic Schottky
|
Microsemi
|
| S8837A |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM5964-8 |
MICROWAVE POWER GAAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM7785-6UL |
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
|
| TIM6472-30SL |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
