| PART |
Description |
Maker |
| GS8161Z36T-133 GS8161Z36T-133I GS8161Z36T-133T GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8161Z18BT-150I GS8161Z18BGT-150 GS8161Z32BD-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 7.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8160ZV18CT-333 GS8160ZV18CT-333I GS8160ZV18CT-30 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8162ZV72CC GS8162ZV72CC-150 GS8162ZV72CC-150I GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
| GS8160Z18T-250 GS8160Z18T-250I GS8160Z18T-225 GS81 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC
|
| GS8160Z18BT-250V GS8160Z18BT-150IV GS8160Z18BT-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8162Z72C |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 35.7流水线和流量，通过同步唑的SRAM
|
GSI Technology, Inc.
|
| IDTIDT71P71604167BQ IDTIDT71P71604200BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SRAM Burst of 2
|
Integrated Device Technology
|
| GS8161FZ18BD-5.5 GS8161FZ18BD-5.5I GS8161FZ18BD-7. |
18Mb Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| IDTIDT71P79104167BQ IDTIDT71P79104167BQI IDTIDT71P |
18Mb Pipelined DDR⑩II SIO SRAM Burst of 2
|
Integrated Device Technology
|
| IDTIDT71P71804167BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 2 35.7流水线的DDR II SRAM的突发⑩2
|
Integrated Device Technology, Inc.
|
| IS61NVF51236 IS61NVF51236-6.5B3 IS61NVF51236-6.5B3 |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
