| PART |
Description |
Maker |
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK7505-30A BUK7505-30A_2 |
TrenchMOS transistor Standard level FET 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
TrenchMOS TM transistor
TrenchMOS(tm) transistor Standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK9614-55A BUK9514-55A |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk
TrenchMOS logic level FET
TrenchMOS TM logic level FET
TrenchMOS(tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHT11N06T PHT11N06 |
TrenchMOS transistor Standard level FET 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP34NQ11T |
N-channel Trenchmos (tm) standard level FET
From old datasheet system
N-channel TrenchMOS⑩ standard level FET
N-channel TrenchMOS standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PH955L |
N-channel TrenchMOS logic level FET
Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle
N-channel TrenchMOS(tm) logic level FET
|
NXP Semiconductors
Philips Semiconductors
|
| PSMN9R1-30YL |
N-channel 9.1 m30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 m? 30 V TrenchMOS logic level FET in LFPAK
N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK
|
NXP Semiconductors N.V.
|
| PSMN5R9-30YL |
N-channel 6.1 m30 V TrenchMOS logic level FET in LFPAK
N-channel 6.1 m 30 V TrenchMOS logic level FET in LFPAK
|
NXP Semiconductors N.V.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| BUK6E4R0-75C |
N-channel TrenchMOS FET
|
NXP Semiconductors N.V.
|
