| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE
100 V, GERMANIUM, SIGNAL DIODE
30 V, GERMANIUM, SIGNAL DIODE
6 V, GERMANIUM, SIGNAL DIODE
20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP
MICROSEMI CORP-LAWRENCE
|
| 1N541 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
| OA1154 |
GERMANIUM DIODE
|
BK
|
| OA1182 |
GERMANIUM DIODE
|
BK
|
| OA85 |
GERMANIUM DIODE
|
ETC
|
| AA135 |
GOLD BONDED GERMANIUM DIODE
|
BKC
|
| 1N2927 |
From old datasheet system
GERMANIUM TUNNEL DIODE
|
ASI[Advanced Semiconductor]
|
| 1N100 1N100A 1N1.0A |
Optimized for Radio Frequency Response
Germanium Diode
|
MICROSEMI[Microsemi Corporation]
|
|
