| PART |
Description |
Maker |
| IDT707288S_L 707288_DS_26036 IDT707288S15PF IDT707 |
64K x 16 Asynchronous Bank-Switchable Dual-Port SRAM
From old datasheet system
HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
|
IDT[Integrated Device Technology]
|
| RJK4512DPE-00-J3 RJK4512DPE |
Silicon N Channel MOS FET High Speed Power Switc
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| AT28HC64B AT28HC64B-120 AT28HC64B-12JC AT28HC64B-1 |
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection
64K (8K x 8) High Speed CMOS
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| AT27BV512-12JC AT27BV512-12JI AT27BV512-12RC AT27B |
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-SOIC -55 to 125 64K X 8 OTPROM, 90 ns, PDSO28
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-PDIP -55 to 125 64K X 8 OTPROM, 150 ns, PDSO28
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IS61LV6416 |
64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS静态RAM) 64K的16高速CMOS静态RAM.3伏，64K的16高速的CMOS静态RAM）的
|
Integrated Silicon Solution, Inc.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W26L010A W26L010A-10 W26L010A-12 W26L010AJ-10 W26L |
JT 10C 10#20 PIN RECP
From old datasheet system
64K X 16 High Speed CMOS Static RAM
HIGH SPEED SRAM 64Kx16
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| AT29C512-9 AT29C512-90JU AT29C512-70TC AT29C512-15 |
High Speed CMOS Logic Dual Positive-Edge-Triggered D-Type Flip-Flops with Set and Reset 14-PDIP -55 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 90 ns, PQCC32
High Speed CMOS Logic Quad 2-Input Exclusive-NOR Gates 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PDIP32
High Speed CMOS Logic Dual Positive-Edge-Triggered D-Type Flip-Flops with Set and Reset 14-SOIC -55 to 125
High Speed CMOS Logic Phase-Locked Loop with VCO and Lock Detector 16-SOIC -55 to 125
512K (64K x 8) 5-volt Only Flash Memory
512K 64K x 8 5-volt Only CMOS Flash Memory
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IC61C6416 IC61C6416-15K IC61C6416-15KI IC61C6416-1 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
BROTHER P-TOUCH LABELER
64K X 16 HIGH-SPEED CMOS STATIC RAM 64K的16 HIGH-SPEED的CMOS静态RAM
|
Integrated Circuit Solu...
ICSI
Integrated Circuit Solution Inc
Black Box, Corp.
|
| W25S243AF-12 W25S243A W25S243A-12 W25S243AD-12 |
DIODE SCHOTTKY QUAD SERIES (RAIL CLAMP) 25V 200mW 0.35V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL 64K X 64 STANDARD SRAM, 12 ns, PQFP128
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| IDT70V7399S IDT70V7399S133BC IDT70V7399S133BCI IDT |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
| IDT70V7399S133DDI |
HIGH-SPEED 3.3V 128K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Techn...
|
