| PART |
Description |
Maker |
| W24L011AJI |
HIGH SPEED SRAM 128Kx8
|
Winbond Electronics
|
| IC61LV12816 IC61LV12816-8TI IC61LV12816-10B IC61LV |
128K x 16 Hight Speed SRAM with 3.3V 128K的16 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Toshiba, Corp.
Linear Technology, Corp.
Electronic Theatre Controls, Inc.
ICSI[Integrated Circuit Solution Inc]
|
| IC61LV2568 IC61LV2568-8TI IC61LV2568-10K IC61LV256 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
256K x 8 Hight Speed SRAM with 3.3V
|
ICSI[Integrated Circuit Solution Inc]
|
| R1RP0404DGE-2PR R1RP0404D R1RP0404DGE-2LR |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (1-Mword 】 4-bit)
4M High Speed SRAM (1-Mword × 4-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| KM681001B KM681001B-15 KM681001B-20 |
From old datasheet system
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
128K x 8 Bit High-Speed CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1008C1B- K6R1008C1B-C10 K6R1008C1B-C12 K6R1008C |
128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静电RAM5V工作，旋转频出。在经营商业和工业温度范围
128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静态RAM5V工作，旋转频出。在经营商业和工业温度范围
128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| R1RP0408DGE-2PR R1RP0408D R1RP0408DGE-2LR |
4M High Speed SRAM (512-kword 8-bit)
4M High Speed SRAM (512-kword ?8-bit)
4M High Speed SRAM (512-kword ?8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| W24L011AQ-10 W24L011AQ-12 W24L011AQ-15 W24L011AT-1 |
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
TRANS PNP W/RES 60HFE NEW S TYPE 128K X 8 STANDARD SRAM, 15 ns, PDSO32
Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No
JT 55C 55#22M SKT PLUG
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| IC61LV256- IC61LV256 IC61LV256-15TG IC61LV256-8TIG |
32K x 8 Hight Speed SRAM with 3.3V
32K x 8 Hight Speed SRAM with 3.3V 32K的8 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
Ecliptek, Corp.
ICSI[Integrated Circuit Solution Inc]
|
| P4C148-55PM P4C149 P4C149-25CC P4C149-25CM P4C149- |
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 超高速每1000 × 4静态CMOS五羊
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 25 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 10 ns, PDIP18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 20 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 超高速每1000 × 4静CMOS五羊
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 35 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 35 ns, CDIP18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 15 ns, CDIP18
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| CXK581000M CXK581000M-10L CXK581000M-10LL CXK58100 |
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-41; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No
IC,SRAM,128KX8,CMOS,DIP,32PIN,PLASTIC
131072-word x 8-bit HIGH SPEED COMS STATIC RAM
|
SONY[Sony Corporation]
|
| AS5LC512K8DJ-12L/IT AS5LC512K8F-12L/IT AS5LC512K8E |
512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
|
Austin Semiconductor, Inc
|
