PART |
Description |
Maker |
APT4012BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 400V 37A 0.120 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
RJH60D5DPQ-E0-T2 |
600V - 37A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6035BVR |
POWER MOS V 600V 18A 0.350 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6011LVFR |
POWER MOS V 600V 49A 0.110 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT6035SVR APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 600V 18A 0.350 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT6010JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
APT6021BFLL APT6021SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 600V 29A 0.210 Ohm
|
Advanced Power Technology, Ltd.
|
APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
AOWF4S60 |
600V 4A a MOS TM Power Transistor
|
Alpha & Omega Semiconductors
|