| PART |
Description |
Maker |
| STP200N6F3 STB200N6F3 STB200N6F3TRL |
120 A, 60 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET Power MOSFET
|
STMicroelectronics
|
| PBSS4112PAN |
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| BUV27 BUV27G |
Bipolar T0220 NPN 8A 120V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 12 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
NPN Silicon Power Transistor
|
Rectron Semiconductor
|
| BUK663R7-75C |
N-channel TrenchMOS FET 120 A, 75 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| SFT2012 |
200 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLID STATE DEVICES INC
|
| 66015-103 66015 66015-001 66015-002 66015-003 6601 |
SINGLE CHANNEL OPTOCOUPLERS(REPLACEMENT FOR TIL 120, TIL 121) 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
SINGLE CHANNEL OPTOCOUPLERS(REPLACEMENT FOR TIL 120/ TIL 121)
|
Micropac Industries, Inc.
MICROPAC[Micropac Industries]
|
| STK350-050 STK350-000 STK350-010 STK350-020 STK350 |
2-channel AF Voltage Amplifier (120 to 150W/channel supported)
|
SANYO[Sanyo Semicon Device]
|
| BUK6E2R0-30C |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
NXP Semiconductors N.V.
|
| GM76C256CW GM76C256CLLT-55W |
x8|2.7~5.5V|55/70/85/100/120|Low Power Slow SRAM - 256K x8 | 2.75.5V的| 55/70/85/100/120 |低功耗SRAM的速度 256K
32K X 8 STANDARD SRAM, 120 ns, PDSO28
|
TE Connectivity, Ltd.
HYNIX SEMICONDUCTOR INC
|
| KSC4010 KSC4010RTU KSC4010OTU KSC4010O |
6 A, 120 V, NPN, Si, POWER TRANSISTOR
Audio Power Amplifier
NPN Epitaxial Silicon Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
