| PART |
Description |
Maker |
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32000C |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000CET |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| LH28F320S5H-L |
32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M 2Mx16 / 4Mx8 )Boot Block 闪速存储器)
|
Sharp Corporation
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| AT49BV321T-85CI AT49BV321T-85TI AT49BV320T-85TI AT |
EEPROM|FLASH|2MX16|CMOS|TSSOP|48PIN|PLASTIC
Metal Film Resistor - RN 1/4 T1 18 5% A
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | TSSOP封装| 48PIN |塑料
EEPROM|FLASH|2MX16|CMOS|BGA|46PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16 |的CMOS | BGA封装| 46PIN |塑料
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Microchip Technology, Inc.
Anpec Electronics, Corp.
|
| AM29LV320DB90EI |
EEPROM,FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
|
AMD Inc
|
| KM23C32000 |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
| EDD2508AKTA-5C-E EDD2508AKTA-5B-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| K3N6C4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| K3P6V2000B-SC |
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
