| PART |
Description |
Maker |
| ZXTN25100DFH |
100V, SOT23, NPN medium power transistor
|
Zetex Semiconductors
|
| ZXTN19100CG ZXTN19100CGTA |
100V NPN low sat medium power transistor in SOT223
|
Diodes Incorporated
|
| DXT2011P5-15 |
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR POWERDI?5
|
Diodes Incorporated
|
| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| PSS8050 PSS8050D PSS8050C |
-100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package; A IRFE9120 with Standard Packaging
BJT
NPN medium power 25 V transistor
|
Philips
|
| MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications
Power 5A 100V Darlington NPN
Power 5A 100V PNP
|
ON Semiconductor
|
| FZT853-15 |
100V NPN MEDIUM POWER TRANSISTOR IN SOT223
|
Diodes Incorporated
|
| ZXTN2011G_06 ZXTN2011G ZXTN2011GTA ZXTN2011GTC ZXT |
100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| ZXTP19100CZ ZXTP19100CZTA |
100V PNP medium power transistor in SOT89
|
Diodes Incorporated
Zetex Semiconductors
|
| ZXTP2029FTA ZXTP2029F |
100V, SOT23, PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
| QM15 QM15HA-H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
CAP CER 1.0UF 100V X7R 20% 1812
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
