| PART |
Description |
Maker |
| KM29V16000ARS |
2M X 8 BIT NAN FLASH MEMORY 2米x 8位南闪存
|
Samsung Semiconductor Co., Ltd.
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58NVG4D2ETA00 |
16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s,
PAROLI 2 Tx AC/ 2.7 Gbit/s
PAROLI 2 Tx AC/ 1.25 Gbit/s
PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
| MB81EDS516445 |
512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
| K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 72SD3232RPFK 72SD3232 72SD3232RPFE 72SD3232RPFH 72 |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
