| PART |
Description |
Maker |
| MSMC-0102 MSMC-0104 MSMC-0103 MSMC-0105 MSMC-0100 |
PHOTOCELL,90mW,150V PEAK, 27KohmMAX LIGHT,2MohmMIN DARK
PHOTOCELL,150mW,200VPK,3.6Kohm MAX LITE,0.3Mohm MIN DARK
PHOTOCELL,90mW,150VPK,5Kohm, MAX LITE,20Mohm MIN DARK
PHOTOCELL,400mW,350VPK,8Kohm MAX LITE,1Mohm MIN. DARK
PHOTOCELL,100mW,150VPK,3Kohm, MAX LITE, 0.2Mohm MIN DARK
PHOTOCELL,100mW,150VPK,80Kohm, MAX LITE,5Mohm MIN DARK
CAP,CERM,DISC,470PF,1KV,20%
CAP,CERM,DISC,0.047UF,1KV,20%
AP,CERM,DISC,5PF,50V,20% INCREMENTS of 10
PHOTOCELL,90mW,150VPK,27Kohm, MAX LITE,0.3Mohm MIN DARK 医药0W的超小型开关电
PHOTOCELL,90mW,150VPK,10Kohm, MAX LITE,20Mohm MIN DARK 医药0W的超小型开关电
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Astrodyne, Inc.
|
| MSOP-10PP |
A1 : MIN 0.000 MAX 0.150 A2 : MIN 0.750 MAX 0.952
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Analog Microelectronics
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
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Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| FS2VS-12 |
Solid-State Panel Mount Relay; Output Device:SCR; Output Voltage Max:280Vrms; Output Voltage Min:24Vrms; Control Voltage Max:140Vrms; Control Voltage Min:90Vrms; Load Current Max:12A; Switching:Random; Switch Function:SPST-NO RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| X25020 X25020P X25020P-2.7 X25020P-3 X25020PI X250 |
SPI Serial E2PROM with Block LockTM Protection SPI串行E2PROM的保护与块LockTM
Solid State Relay; Output Device:SCR; Output Voltage Max:530Vrms; Output Voltage Min:48Vrms; Control Voltage Max:3VDC; Control Voltage Min:32VDC; Load Current Max:110A; Switching:Zero Cross; Relay Options:Indicator Light RoHS Compliant: Yes
Solid State Relay; Output Device:SCR; Output Voltage Max:280Vrms; Output Voltage Min:24Vrms; Control Voltage Max:3VDC; Control Voltage Min:32VDC; Load Current Max:125A; Switching:Zero Cross; Relay Options:Indicator Light RoHS Compliant: Yes
Solid State Relay; Output Device:SCR; Output Voltage Max:280Vrms; Output Voltage Min:24Vrms; Control Voltage Max:3VDC; Control Voltage Min:32VDC; Load Current Max:110A; Switching:Zero Cross; Relay Options:Indicator Light RoHS Compliant: Yes
Solid State Relay; Output Device:SCR; Output Voltage Max:660Vrms; Output Voltage Min:48Vrms; Control Voltage Max:10VAC; Control Voltage Min:140VAC; Load Current Max:90A; Switching:Zero Cross; Relay Options:Indicator Light RoHS Compliant: Yes
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Hitachi,Ltd.
XICOR[Xicor Inc.]
|
| SC-70-6 |
A : MIN 0.80 MAX 1.10 A1 : MIN 0.00 MAX .010
|
Analog Microelectronics
|
| MP120D2 MP240D2 MPDCD3-B |
; Output Device:Transistor; Output Voltage Max:60VDC; Output Voltage Min:3VDC; Control Voltage Max:32VDC; Control Voltage Min:3VDC; Load Current Max:3A; Switching:Zero Cross; Leaded Process Compatible:Yes; Output Current Max:3A
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Crydom Inc.
CRYDOM CORP
|
| AIDL9 AIDL45 AIDL5J SIDM17 SIDM13 HCMDL20 ACMDL20G |
Logic IC
10-Bit, 125Msps Low Noise 3V ADCs; Package: QFN; No of Pins: 32; Temperature Range: 0°C to 70°C
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max ±12); I_D Q1, max (mA): (max 500)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max /-10); I_D Q1, max (mA): (max 100)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; Comments
Frequency Switching Power Transistor; Application Scope: switching; Part Number: 2SA1736; H_FE: (min 120 @V_CE=2V, I_C=0.1A) (max 400 @V_CE=2V, I_C=0.1A)
Junction FETs (Single); Surface Mount Type: Y; Package: VESM2; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 0.08) (max 0.48); I_DSS, max (mA): (min 1.4); |Yfs|, min (mS): (max -20)
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MOLD; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor; Application Scope: power amplification; Part Number: 2SA1241 逻辑IC
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max 400) 逻辑IC
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA966 逻辑IC
Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 5) (max 30); I_DSS, max (mA): (min 25); |Yfs|, min (mS): (max -40) 逻辑IC
Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: Low-noise; I_DSS, min (mA): (min 0.3) (max 6.5); I_DSS, max (mA): (min 1.2); |Yfs|, min (mS): (max -50)
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Bourns, Inc.
ANADIGICS, Inc.
ITT, Corp.
|
| HM628512BI HM628512BLFPI-7 HM628512BLFPI-8 HM62851 |
4 M SRAM (512-kword x 8-bit)
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Octal Buffers And Line Drivers With 3-State Outputs 20-CDIP -55 to 125
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 47.0 kOhm; R2: 47.0 k; hFE (min): 70.0; Vi (on) (min): 1.0 2mA / 0.3V;
Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 47.0 kOhm; R<sub>2</sub>: 47.0 k?; h<sub>FE</sub> (min): 70.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V;
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http://
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| A82DL1642 A82DL16X2T A82DL1622 A82DL1632 A82DL1632 |
Reed Switch; Pull-In Amp Turns Max:25; Pull-In Amp Turns Min:16; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:13.5mm; Breakdown Voltage Min:250VDC
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL16x2T（ü）16兆位Mx8 Bit/1Mx16位）的CMOS 3.3伏只，同时闪电行
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AMIC Technology Corporation
AMIC Technology, Corp.
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