PART |
Description |
Maker |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MSAHX75L60C |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
MSAGX75F60A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
10N70-C |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|
AP40G120W |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
AP28G40GEO |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
SSM20G45EGH SSM20G45EGJ |
N-channel Insulated-Gate Bipolar Transistor
|
Silicon Standard Corp.
|
MSAHZ52F120A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Microsemi Corporation
|