PART |
Description |
Maker |
KM23C32000CET |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
AT49BV3218-90TI AT49BV3218-90CI AT49BV3218T-11CI A |
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Wakefield Thermal Solutions, Inc.
|
K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
E28F320J3A-110 |
IC,EEPROM,FLASH,2MX16/4MX8,CMOS,TSSOP,56PIN,PLASTIC
|
Intel Corp
|
K3P6C2000B-SC |
32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM 32兆位Mx16 / 1Mx32)的CMOS掩膜ROM 32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CMS3216LAF CMS3216LAG CMS3216LAH |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
K3N6C3000E-DC |
32M-Bit (4Mx8) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits DDR400)
|
Elpida Memory
|
EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5 |
512M bits DDR2 SDRAM (32M words x 16 bits)
|
Elpida Memory
|
HYE18P32161AC HYE18P32161ACL70 HYE18P32161ACL85 HY |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04 32M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
A82DL3234 A82DL3244 A82DL3224UG-70 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAMA82DL32x4T(ü)32兆位Mx8 Bit/2Mx16位)的CMOS 3.3伏只,同时闪电行 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL32x4T(ü)32兆位Mx8 Bit/2Mx16位)的CMOS 3.3伏只,同时闪电行 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL32x4T(ü)32兆位4Mx8 Bit/2Mx16位)的CMOS 3.3伏只,同时闪电行
|
AMIC Technology, Corp. AMIC Technology Corporation
|