PART |
Description |
Maker |
IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
IRGS30B60 IRGSL30B60K IRGS30B60K IRGB30B60K |
600V UltraFast 10-30 kHz IGBT in a TO-262 package 600V UltraFast 10-30 kHz IGBT in a D2-Pak package 600V UltraFast 10-30 kHz IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
GA400TD60U |
600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT
|
IRF[International Rectifier]
|
GB70NA60UF13 |
High Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
|
Vishay Siliconix
|
IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
IXGM20N60A IXGM20N60 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
IXGH10N100A IXGH10N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
IXGH30N60 IXGM30N60A IXGH30N60A IXGM30N60 |
LOW VCE(SAT) IGBT, HIGH SPEED IGBT
|
IXYS[IXYS Corporation]
|
IXGM17N100 IXGH17N100 IXGH17N100A IXGM17N100A |
3.5V diode Low V IGBT High speed IGBT
|
IXYS Corporation
|
IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|