PART |
Description |
Maker |
MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400(x16)的快闪记忆体和4M(x16)的静态RAM
|
Spansion, Inc.
|
MB84VD2328 MB84VD23280FA-70PBS MB84VD23280FA MB84V |
64M (X8/X16) FLASH MEMORY & 8M (X8/X16) STATIC RAM 2-Stacked MCP
|
SPANSION[SPANSION] Fujitsu
|
LRS1805A |
Stacked Chip 64M (x16) Flash Memory 16M (x16) Smartcombo RAM
|
Sharp Electrionic Components
|
K8D6316UBM-TI08 K8D638UTM-DI09 K8D638UTM-FC09 K8D6 |
4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
http://
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
K8D6316UBM-YI07 K8D6316UBM-YI08 K8D6316UBM-YI09 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MB84VD22081EA-90-PBS MB84VD22082EA-90-PBS MB84VD22 |
32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
MB84VD22281EA-90-PBS MB84VD22282EA-90-PBS MB84VD22 |
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 8M(x8/x16) static RAM 32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
Fujitsu Microelectronics
|
MB84VD22182EE-90-PBS MB84VD22184EE-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
AB28F400BX-T90 A28F400BX-B AB28F400BX-B90 |
4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT 256K x16/ 512K x8 BOOT BLOCK FLASH MEMORY FAMILY JT 23C 2#16 21#20 SKT RECP JT 32C 32#20 PIN RECP 4-MBIT (256K x16. 512K x8) BOOT BLOCK FLASH MEMORY FAMILY 4兆位56K x16。为512k × 8)启动块闪存系列 4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY
|
http:// Intel Corporation Intel Corp. Intel, Corp.
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