| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM482M3244VTA-5L |
64Mb SDRAM
|
ETC[ETC]
|
| WED3DG649V7D2 WED3DG649V75D2 WED3DG649V10D2 WED3DG |
64MB- 8M x 64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| AD484M1644VTA AD484M1644VTA-10I AD484M1644VTA-10L |
Ascend Semiconductor Corporation(64Mb SDRAM)
|
ETC[ETC]
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
| W986416CH W986416CH-8H |
1M x 16 BIT x 4 BANKS SDRAM
x16 SDRAM
|
Winbond Electronics Corp
|
| HB52E88EM HB52E89EM |
64 MB Unbuffered SDRAM DIMM(64MB 未缓冲同步DRAM DIMM)
|
Hitachi,Ltd.
|
| HY5V66EF6 HY5V66EF6-5 HY5V66EF6-6 HY5V66EF6-7 HY5V |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
|
| MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400（x16）的快闪记忆体和4M（x16）的静态RAM
|
Spansion, Inc.
|
| W981216AH-8H W981216AH-75 W981216AH |
2M x 16 bit x 4 Banks SDRAM
x16 SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
