| PART |
Description |
Maker |
| GS8170DD36C-333 GS8170DD36C-250 GS8170DD36C-300 GS |
18Mb x2Lp CMOS I/O Double Data Rate SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb 1x2Lp CMOS I/O Double Data Rate SigmaRAM 35.71x2Lp的CMOS的I / O双数据速率SigmaRAM
|
GSI Technology, Inc.
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| GS8161Z36T-133 GS8161Z36T-133I GS8161Z36T-133T GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| ICS842023AGI ICS842023AGIT ICS842023I |
From old datasheet system
FemtoClock? HSTL Clock Generator. Industrial Temperature.
FEMTOCLOCKS⑩ CRYSTAL-TO- HSTL CLOCK GENERATOR
FEMTOCLOCKS CRYSTAL-TO- HSTL CLOCK GENERATOR
|
ICST[Integrated Circuit Systems]
|
| Y51-03 Y51-02 Y21-01 Y31-01 Y41-03 Y61-03 Y21-02 Y |
VALVE STARTUP 3/8 阀门启8
VALVE SHUT OFF 1/8 阀门关闭了1 / 8
VALVE STARTUP 1/2 阀门启 / 2
VALVE SHUT OFF 1/4 阀门关闭了1 / 4
VALVE SHUT OFF 3/4
VALVE STARTUP 1/4
IC SRAM 512KX36 2.5V SYN 100TQFP
VALVE SHUT OFF 1/2
BRACKET T
1-Mbit (128K x 8) Static RAM
IC MCU 8K FULL SPEED USB 28SDIP
BRACKET L
1M/512K FAST ASYNC SRAM
5V, 3.3V, ISR™ High-Performance CPLDs
256K (32K x 8) Static RAM
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
SPACER
EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
1-Mbit (64K x 16) Static RAM
2M x 8 Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture
BRANCH UNIT
|
AMIC Technology, Corp.
Vishay Intertechnology, Inc.
NXP Semiconductors N.V.
Harwin PLC
|
| GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
http://
|
| OP467GS-REEL |
18V; quad precision, high-speed operational amplifier. For high-speed image display drivers, high frequency active filters
|
Analog Devices
|
| BC857C BC856A BC857A BC856B BC857B BC858B BC858C B |
PNP SMALL SIGNAL TRANSISTOR 310MW
High Speed CMOS Logic Hex Buffer/Line Driver with Non-Inverting 3-State Outputs 16-PDIP -55 to 125
High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125
High Speed CMOS Logic Dual Decade Ripple Counter 16-SOIC -55 to 125
High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125
High Speed CMOS Logic Octal D-Type Flip-Flop with Reset 20-SOIC -55 to 125
High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-SOIC -55 to 125
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GS816118CD-333I GS816118CD-300 GS816118CD-300I GS8 |
18Mb Burst SRAMs
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
