| PART |
Description |
Maker |
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
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NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| 2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
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NXP SEMICONDUCTORS
|
| SOP-8PP |
A : MIN 1.350 MAX 1.750 A1 : MIN 0 MAX 0.150
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Analog Microelectronics
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
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Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| SC-70-6 |
A : MIN 0.80 MAX 1.10 A1 : MIN 0.00 MAX .010
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Analog Microelectronics
|
| MP120D2 MP240D2 MPDCD3-B |
; Output Device:Transistor; Output Voltage Max:60VDC; Output Voltage Min:3VDC; Control Voltage Max:32VDC; Control Voltage Min:3VDC; Load Current Max:3A; Switching:Zero Cross; Leaded Process Compatible:Yes; Output Current Max:3A
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Crydom Inc.
CRYDOM CORP
|
| AM29LV800DB-120SD AM29LV800DB-120ED AM29LV800DB-12 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Time-Delay Relay; Time Range:0.1 sec. to 30 sec.; Mounting Type:Plug In; Timing Function:Delay-On-Make; Relay Mounting:Plug-In; Supply Voltage AC, Max:230V; Supply Voltage AC, Min:115V; Supply Voltage DC, Max:230V RoHS Compliant: Yes
Time-Delay Relay; Contacts:NO; Time Range:0.1 to 102.4s; Timing Function:Delay-On-Make; Supply Voltage Max:288V; Supply Voltage Min:100V; Time Range Max:102.4s; Time Range Min:0.1s RoHS Compliant: Yes
Low Voltage, Active Transmission Line Termination Clamp (4 Terminations)
Time-Delay Relay; Time Range:0.1 - 30; Timing Function:Delay-On-Make; Time Range Max:30s; Time Range Min:0.1s
Time-Delay Relay; Time Range:0.1 sec. to 30 sec.; Mounting Type:Plug-In; Timing Function:Delay-On-Make; Supply Voltage:115V RoHS Compliant: Yes
Time-Delay Relay; Time Range:1sec. to 1024 sec.; Mounting Type:Plug In; Timing Function:Delay-On-Make; Relay Mounting:Plug-In; Supply Voltage AC, Max:288V; Supply Voltage AC, Min:19V; Supply Voltage DC, Max:288V RoHS Compliant: Yes
2-Port PCI-X to PCI-X Bridge
Time-Delay Relay; Contacts:NO; Timing Function:Delay-On-Make; Supply Voltage Max:50V; Supply Voltage Min:18V; Time Range Max:102.4s; Time Range Min:0.1s RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 120 ns, PDSO48
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Advanced Micro Devices, Inc.
|
| FS30UM-3 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Bench Power Supply; Output Voltage:35V; Output Current:6A; Number of Outputs:1; Calibrated:No; Display Technology:Digital; Output Current Max:6A; Output Current Min:0A; Output Voltage Max:35V; Output Voltage Min:0V
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| H11G1SR2M H11G1SR2VM H11G1TM H11G1TVM H11G2M H11G1 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.4 to 4.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| FK20UM-5 |
Bench Power Supply; Output Voltage:16V; Output Current:10A; Number of Outputs:1; Calibrated:No; Display Technology:LED; Output Current Max:10A; Output Current Min:0A; Output Voltage Max:16V; Output Voltage Min:0V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
|
| A82DL1642 A82DL16X2T A82DL1622 A82DL1632 A82DL1632 |
Reed Switch; Pull-In Amp Turns Max:25; Pull-In Amp Turns Min:16; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:13.5mm; Breakdown Voltage Min:250VDC
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL16x2T（ü）16兆位Mx8 Bit/1Mx16位）的CMOS 3.3伏只，同时闪电行
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AMIC Technology Corporation
AMIC Technology, Corp.
|
