| PART |
Description |
Maker |
| EC002637 EC001121 27440402 |
Base strip - MC 1,5/20-G-3,5 - 1844391
|
PHOENIX CONTACT
|
| EC001121 EC002637 27440402 1766356 |
Base strip - GMSTBA 2,5/ 3-G - 1766356
|
PHOENIX CONTACT
|
| 1753592 EC001121 EC002637 27440402 |
Base strip - MSTBV 2,5/10-G - 1753592
|
PHOENIX CONTACT
|
| KU300WCNU KU12 |
60 A, BARRIER STRIP TERMINAL BLOCK, 2 ROWS, 1 DECK
Base Mount Double Row Terminal Blocks
|
COOPER INDUSTRIES
List of Unclassifed Man...
|
| 1N4931A 1N4931 1N4925A 1N4916A 1N4916 1N4923A 1N49 |
MCV 1,5/ 2-G-3,5 OG
19.2 VOLT NOMINAL ZENER VOLTAGE 5% 19.2伏的额定电压稳压5
19.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
Microsemi, Corp.
|
| 5013RGBAMPLIFIER |
Strip amplifier, it makes long LED strip implementation much more conveniently.
|
List of Unclassifed Manufacturers
|
| D01-6020005 |
Strip of 100 Sub-Miniature H3155-05 Sockets on polyester strip, gold clip gold shell PCB TERMINAL
|
Harwin PLC
|
| 1N968B-1 1N963B-1 1N963B 1N965B-1 1N965B 1N962B 1N |
METALLURGICALLY BONDED
MCV 1,5/ 2-G-3,81
Zener Diodes(齐纳二极 齐纳二极管（齐纳二极管）
Zener Diodes(榻?撼浜??绠?
Explosion-Proof Limit Switches Series CX: Standard Housing: Side Rotary, Lever not included
|
Compensated Deuices Inc...
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
Microsemi, Corp.
|
| EPG4012J |
1000Base-T Module
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
PCA ELECTRONICS INC.
|
| EPG4012S |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
|
| Z5.530.0225.0 |
Socket connector strip for printed circuit with contact pin, 2 contact, 5 mm pitch, 1 row, male, brass contact material, nickel plated contact finish, straight configuration, pcb termination 8 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 2 DECKS
|
Molex, Inc.
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
