PART |
Description |
Maker |
ZXMHC6A07T8TA ZXMHC6A07T8 ZXMHC6A07T8TC |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
|
ZETEX[Zetex Semiconductors]
|
ZXMHC6A07T8_05 ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07 |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
|
ZETEX[Zetex Semiconductors] Diodes Incorporated
|
ZXMC4559DN8NBSP ZXMC4559DN8TC ZXMC4559DN8 ZXMC4559 |
TIP REPLACEMENT .125 700 DEG 3600 mA, 60 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
|
Zetex Semiconductor PLC ZETEX[Zetex Semiconductors] Diodes Incorporated
|
CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
KDS4559 |
60V Complementary PowerTrench MOSFET
|
Guangdong Kexin Industrial Co.,Ltd
|
ZXMS6005DT8 ZXMS6005DT8TA |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET?/a> MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET垄芒 MOSFET
|
Diodes Incorporated
|
NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 2.5AI(四)|的SOT - 223 P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管(漏电2.5A, 漏源电压-60V,导通电.3Ω
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
PHC20512 |
Complementary enhancement mode MOS transistors
|
PHILIPS[Philips Semiconductors]
|
DMC3028LSDX DMC3028LSDX-13 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
|
Diodes
|
DMC1028UFDB |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
|
Diodes
|