| PART |
Description |
Maker |
| K7N403609B K7N403609B-QC20 K7N401801B-QC13 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM 128K × 36
128Kx36 & 256Kx18 Pipelined NtRAMTM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7B401825B K7B403625B |
128Kx36 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| KM718FV4021 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| KM718V849 KM736V749 |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung Semiconductor
|
| K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| CY7C1353B-40AC CY7C1353B-50BGC CY7C1353B-50AC CY7C |
256Kx18 Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor Corp.
|
| KM736V790 |
128Kx36 Synchronous SRAM
From old datasheet system
|
Samsung
|
| KM736V789 |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水线脉冲静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736V799 |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36浣??姝ユ?姘寸嚎??????RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1353-40AC CY7C1353-66AC |
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 14 ns, PQFP100
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
