| PART |
Description |
Maker |
| SP8782 SP8782A SP8782ADG SP8782BMP DES9208901AC DE |
6.0V; 1GHz 16/17, 32/33 multi-modulus divider
1GHz ± 16/17, ±32/33 Multi-Modulus Divider 1GHz的16/17，32/33多模数分频器
TV 4C 4#16 PIN WALL RECP 1GHz的16/17，32/33多模数分频器
1GHz 16/17/ 32/33 Multi-Modulus Divider
1GHz 16/17 / 32/33 Multi-Modulus Divider
1GHz 16/17 32/33 Multi-Modulus Divider
1GHz 16/17, 32/33 Multi-Modulus Divider
1GHz 梅 16/17, 梅32/33 Multi-Modulus Divider
1GHz ÷ 16/17, ÷32/33 Multi-Modulus Divider
|
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| 0961024033SPD050 0961024026SPD051 0961024028SPD055 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
DREHPOTENTIOMETER DRAHT LIN 6.3MM 2K5 1W
DREHPOTENTIOMETER DRAHT LIN 6.3MM 50R 1W
DREHPOTENTIOMETER DRAHT LIN6.3MM 100R 1W
DREHPOTENTIOMETER DRAHT LIN6.3MM 250R 1W
DREHPOTENTIOMETER DRAHT LIN6.3MM 500R 1W
DREHPOTENTIOMETER DRAHT LIN 6.3MM 25K 1W
DREHPOTENTIOMETER DRAHT LIN 6.3MM 1K 1W
DREHPOTENTIOMETER DRAHT LIN 6.3MM 50K 1W DREHPOTENTIOMETER金属丝林6.3毫米50KW
|
SIEMENS AG
|
| 33663 |
LIN 2.1 / SAEJ2602-2 Dual LIN Physical Layer
|
Freescale Semiconductor
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| TIM7179-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| MM908E622 MM908E622ACDR2 MM908E622ACDWB |
Integrated Quad Half-Bridge, Triple High-Side and EC Glass Driver with Embedded MCU and LIN for High End Mirror
|
Freescale Semiconductor, Inc
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| G6K-2F-RF-TDC5 G6K-2F-RF-S |
Surface Mount, 1GHz / 3 GHz Miniature DPDT, High Frequency Relay
|
Omron Electronics LLC
|
