| PART |
Description |
Maker |
| APT6017JFLL |
POWER MOS 7 600V 31A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
| APT8024B2FLL APT8024LFLL |
POWER MOS 7 800V 31A 0.240 Ohm
|
Advanced Power Technology
|
| HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 15A条（丁）|52AA
15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| MSP0505W |
-55V(D-S) P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| IRF5M3205 |
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.015ohm, Id=35A)
THRU-HOLE (TO-254AA) 55V, N-CHANNEL
|
IRF[International Rectifier]
|
| HUFA75329S3S HUFA75329G3 HUFA75329P3 HUFA75329S3ST |
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 49A, 0.024 Ohms @ VGS = 10V TO-263/D2PAK Package
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
49A 55V 0.024 Ohm N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR9024N IRFU9024N IRFRU9024N IRFR9024NTR IRFR902 |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-55V Rds(on)=0.175ohm Id=-11A)
P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) P通道表面贴装HEXFET功率MOSFET的性（P沟道表贴型的HEXFET功率马鞍山场效应管）
|
http://
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFZ44N IRFZ44 IRFZ44NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)
|
IRF[International Rectifier]
|
| IRF5Y5305CM |
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*)
-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
| STB80NF55L-06 STB80NF55L-06T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
