PART |
Description |
Maker |
SD036-70-62-531 |
Small Area Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
S6337-01 |
Large area photodiode for UV to IR, precision photometry
|
Hamamatsu Corporation
|
S5377-05 S4276-02 S4276-03 S5377 S5377-02 S5377-03 |
Large area Si PIN photodiode for direct detection
|
HAMAMATSU[Hamamatsu Corporation]
|
S3590-08 S3590-09 |
Si PIN photodiode Large area sensors for scintillation detection
|
Hamamatsu Corporation
|
C9728DK-10-15 |
For diffraction, cassette type with USB 2.0 interface Photodiode area: 52.8 x 52.8 mm
|
Hamamatsu Corporation
|
G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
S3883 S3071 S3072 |
Si PIN photodiode Large area, high-speed Si PIN photodiodes 硅PIN光电二极管大面积,高速硅PIN光电二极
|
Hamamatsu Photonics K.K.
|
C9732DK-1111 |
For soft X-ray imaging, cassette type with USB 2.0 interface Large photodiode area: 120 × 120 mm
|
Hamamatsu Corporation
|
C9732DK-11-15 |
For soft X-ray imaging, cassette type with USB 2.0 interface Large photodiode area: 120 x 120 mm
|
Hamamatsu Corporation
|
SFH250F SFH250 SFH202 SFH202A |
PIN PHOTODIODE FIBER OPTIC PHOTODIODE DETECTOR, 400-1100nm, THROUGH HOLE MOUNT 50 V, PIN photodiode
|
Siemens Semiconductor G... SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|