| PART |
Description |
Maker |
| LT3651-4.1 LT3651IUHE-4.2PBF |
Monolithic 4A High Voltage Monolithic 4A High Voltage
BATTERY CHARGE CONTROLLER, 1100 kHz SWITCHING FREQ-MAX, PQCC36
|
LINEAR TECHNOLOGY CORP
|
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3064 ECN3064SP ECN3064SPR ECN3064SPV |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
