PART |
Description |
Maker |
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM 32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
M27C1001-15B1 1001-80F6 M27C1001-20B3 M27C1001-35F |
128K X 8 UVPROM, 80 ns, CDIP32 128K X 8 OTPROM, 200 ns, PDIP32 128K X 8 UVPROM, 35 ns, CDIP32 128K X 8 OTPROM, 70 ns, PQCC32 128K X 8 UVPROM, 200 ns, CDIP32 128K X 8 OTPROM, 120 ns, PDSO32 128K X 8 OTPROM, 250 ns, PDSO32 128K X 8 OTPROM, 45 ns, PQCC32 128K X 8 UVPROM, 100 ns, CDIP32 128K X 8 OTPROM, 100 ns, PDIP32
|
意法半导 STMICROELECTRONICS
|
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http:// Maxwell Technologies, Inc
|
CY7C1018CV33-12VC CY7C1018CV33-8VC CY7C1018CV33 CY |
128K x 8 static RAM, 8ns Memory : Async SRAMs 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C0833AV CY7C0833AV-100BBC CY7C0833AV-100BBI CY7 |
FLEx18⑩ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor
|
CY7C1024DV33-8BGXC |
3-Mbit (128K X 24) Static RAM 128K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY62137CV30LL-55BVXI CY62137CV30LL-70BAE CY62137CV |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
|
W27L01 W27L01P-70 W27L01P-90 W27L01Q-70 W27L01Q-90 |
From old datasheet system 128K X 8 ELECTRICALLY ERASABLE EPROM 128K X 8 EEPROM 12V, 90 ns, PDSO32
|
Winbond Electronics Corp Winbond Electronics, Corp.
|
|