| PART |
Description |
Maker |
| JS48F4400P0VB00 PF48F2000P0ZBQ0A JS28F128P30B85B P |
32M X 16 FLASH 1.8V PROM, 95 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56
4M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88
8M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
| K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory
32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
| MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11 |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作
NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited.
Fujitsu, Ltd.
FUJITSU LTD
|
| PC28F256P30TFA RC28F256P30TFA |
32M X 16 FLASH 1.8V PROM, PBGA64 LEAD FREE, BGA-64
16M X 16 FLASH 1.8V PROM, 100 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
| S29GL512N10FFI10 S29GL512N10FAI20 |
32M X 16 FLASH 3V PROM, 100 ns, PBGA64
|
SPANSION LLC
|
| AT49SN6416T AT49SN3208T AT49SN6416T-90CJ |
AT49SN6416(T)/3208(T) Advance Information [Updated 3/02. 38 Pages] 64M bit and 32M. 1.8-Volt Burst and Page Mode Flash Memory
4M X 16 FLASH 1.8V PROM, 90 ns, CBGA55
|
ATMEL CORP
|
| AT45DB321D-TU AT45DB321D-CNU AT45DB321D-MU AT45DB3 |
32-megabit 2.7-volt DataFlash 32M X 1 FLASH 2.7V PROM, DSO8
|
Atmel Corp.
Atmel, Corp.
|
| S29CD032J0MFAM033 S29CD016J0MQFM130 S29CD016J0PQFM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
|
Spansion, Inc.
SPANSION LLC
|
