| PART |
Description |
Maker |
| H11F13SD |
1 CHANNEL FET OUTPUT OPTOCOUPLER
|
FAIRCHILD SEMICONDUCTOR CORP
|
| H11F33SD 1F1.300 |
1 CHANNEL FET OUTPUT OPTOCOUPLER LEAD FREE, DIP-6
|
Fairchild Semiconductor, Corp.
|
| PSMN4R4-80PS |
N-channel 80 V, 4.1 m惟 standard level FET
N-channel 80 V, 4.1 m standard level FET 100 A, 80 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 80 V, 4.1 mΩ standard level FET
|
NXP Semiconductors N.V.
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| FJZ594JC FJZ594J FJZ594JB FJZ594JBTF FJZ594JTF FJZ |
Silicon N-Channel Junction FET
Si N-channel Junction FET 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system
|
NEC[NEC]
|
| BUK9Y19-55B |
N-channel TrenchMOSlogic level FET
N-channel TrenchMOS⑩ logic level FET
N-channel Trenchmos (tm) logic level FET
|
PHILIPS[Philips Semiconductors]
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| PMR400UN |
N-channel mTrenchMOS ultra low level FET
Bench Power Supply; Output Voltage:32V; Output Current:3A; Calibrated:No; Line Regulation Constant Voltage:Less Than 0.1% 3 mV; Load Regulation Constant Current:Less Than 0.1% 2mA
|
NXP Semiconductors
Philips Semiconductors
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
