| PART |
Description |
Maker |
| CRF24010 |
10 W, SiC RF Power MESFET
|
CREE[Cree, Inc]
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| RFHA3942D |
35W Linear GaN on SiC Power Amplifier Die
|
RF Micro Devices
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| NEZ6472-15B NEZ5258-4BD NEZ4450-8BD NEZ4450-8B NEZ |
C-BAND POWER GAAS MESFET C波段功率GaAs MESFET
CAP 100UF 6V 20% TANT SMD-6032-28 TR-7
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| S6205 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| NEZ1011-8E NEZ1414-8E |
8W X, Ku-BAND POWER GaAs MESFET 8瓦特十，KU波段功率GaAs MESFET
8W X / Ku-BAND POWER GaAs MESFET
8W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| AFM06P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip
|
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| CGD15FB45P |
Six Channel SiC MOSFET Driver Gate Driver for 1200V SiC MOSFET Power Module
|
Cree, Inc
|
| MGF1951A-01 MGF1951A 1951A |
Medium Power Microwave MESFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
