PART |
Description |
Maker |
EL5130IS-T7 EL5130ISZ EL5131 EL5131IW-T7 EL5131IWZ |
500MHz Low Noise Amplifiers 1 CHANNEL, VIDEO AMPLIFIER, PDSO8 500MHz Low Noise Amplifiers 500MHz的低噪声放大
|
http:// INTERSIL[Intersil Corporation] Intersil, Corp.
|
BFG67/XT/R |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-143 晶体管|晶体管|叩| 10V的五(巴西)总裁| 50mA的一(c)|的SOT - 143
|
NXP Semiconductors N.V.
|
EL5131 EL5130 |
Single, 500MHz Low Noise Amplifier with Enable
|
Intersil
|
CNS7109 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
CNS7105 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
CNS7106 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
SMN7114-C2A SMN7114 |
SURFACE MOUNT AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
SMN7108 SMN7108-D1C |
1/2 INCH SURFACE MOUNT AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
ADR361BUJZ-R2 ADR363BUJZ-R2 ADR365WAUJZ-R7 ADR360- |
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.5 VOUT; Package: TSOT; No of Pins: 5; Temperature Range: Industrial 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO5 Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.0 VOUT; Package: TSOT; No of Pins: 5; Temperature Range: Industrial 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO5 Low Power, Low Noise Voltage References with Sink/Source Capability
|
Analog Devices, Inc.
|
D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143 TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143 From old datasheet system
|
NEC Electron Devices
|
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