| PART |
Description |
Maker |
| APTGT30H170T3G |
Full - Bridge Trench Field Stop IGBT Power Module 45 A, 1700 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SEMIX653GD176HDC |
Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
| APTGT150DH170G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 250 A, 1700 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| CM1200E4C-34N |
1200 A, 1700 V, N-CHANNEL IGBT
|
POWEREX INC
|
| CM1200HA-34H |
1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| IRF510 |
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| IRF510 |
5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFET
|
Intersil Corporation
|
| QIS1790001 |
Single IGBT Module 900 Amperes/1700 Volts
|
Powerex Power Semicondu...
|
| CM450DXL-34SA |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM600DXL-34SA |
Dual IGBT NX-Series Module 600 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM450DX-34SA |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
