| PART |
Description |
Maker |
| LCD-160G160A |
160 x 160 Dots Graphic LCD 160 × 160点阵图形液晶显示
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| 156CMQ200-G |
160 A, SILICON, RECTIFIER DIODE, TO-249
|
SENSITRON SEMICONDUCTOR
|
| AD8304 AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 AD |
160 dB Logarithmic Amplifier with Photo-Diode Interface
160 dB Range (100 pA -10 mA) Logarithmic Converter
|
AD[Analog Devices]
|
| MJE4342 MJE4343 MJE4353 MJE4352 |
16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
|
MOTOROLA[Motorola, Inc]
|
| TFH160A |
160 MHz SAW Filter For CDMA Basestation Applications(160 MHz SAW滤波CDMA基站设备应用))
|
Vectron International, Inc.
|
| B9946 B9946CA IMIB9946 IMIB9946CA |
160-MHz Clock Support
From old datasheet system
3.3V 160-MHz 1:10 Clock Distribution Buffer
3.3V, 160-MHz, 1:10 Clock Distribution Buffer 3.3伏，160兆赫:10时钟分配缓冲
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
|
| IRLU8721PBF IRLR8721PBF |
Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status: Remarks:
HEXFET Power MOSFET HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| TCB8GOB26CFREQ-OUT5 TCB8GOB26BFREQ-OUT5 HCB8GOD56B |
TCXO, CLOCK, 1 MHz - 160 MHz, LOW POWER SCHOTTKY OUTPUT DIP-4
TCXO, CLOCK, 10 MHz - 160 MHz, HCMOS OUTPUT DIP-4
TCXO, CLOCK, 10 MHz - 160 MHz, ECL 10KH OUTPUT DIP-4
TCXO, CLOCK, 1 MHz - 160 MHz, ACMOS OUTPUT DIP-4
|
Vectron International, Inc.
|
| B9947 B9947CA IMIB9947CA |
160-MHz Clock Support
3.3V, 160-MHz, 1:9 Clock Distribution Buffer
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
|
| TC74AC273P07 TC74AC273P TC74AC273F |
CMOS Digital Integrated Circuit Silicon Monolithic Octal D-Type Flip Flop with Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.55 to 4.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
|
Toshiba Semiconductor
Toshiba, Corp.
|
| 3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance.
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance.
3W SILICON ZENER DIODE
|
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
娴???洪??靛??ㄤ欢??????
http://
Jinan Gude Electronic D...
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