PART |
Description |
Maker |
MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214- |
GaN on SiC Depletion-Mode Transistor Technology Internally Matched
|
M/A-COM Technology Solutions, Inc.
|
RUP15050-10 |
GaN-SiC Broadband Amplifier
|
RFHIC
|
MAGX-000025-150000-V1 MAGX-000025-150000-15 |
GaN on SiC HEMT Power Transistor
|
M/A-COM Technology Solution... M/A-COM Technology Solu...
|
TGF2023-2-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
MAGX-001214-500L00-V2 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
MAGX-000035-010000 MAGX-000035-01000S MAGX-000035- |
GaN on SiC HEMT Power Transistor Common-Source configuration
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
MAGX-001214-250L00 MAGX-001214-SB1PPR MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
MAGX-000912-125L00 MAGX-000912-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
BF994SA BF994SB BF994S BF994 |
From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode CAP CER 47PF 50V 5% C0G 0603
|
Vishay Telefunken VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|